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Ba(Mg, Ta)O3-BaSnO3 High-Q Dielectric Resonator
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Dense ceramics with the chemical formula (1-X)Ba(Mg1/3Ta2/3)O3-XBaSnO3(X=0-0.15) are prepared for use as dielectric resonators. The obtained dielectric constant and Q value for Ba(Mg1/3Ta2/3)O3 were 24 and 43000 at 10 GHz, respectively. As X increased from 0 to 0.15, the temperature coefficient of resonant frequency decreased gradually from 5.4 to -0.5 ppm/ °C. At X=0.05, the Q value decreased drastically, and at X=0.10-0.15, the Q value increased to 33000 at 10 GHz. The specimens were investigated by scanning electron microscopy and X-ray diffraction analysis. It is found that Q improvement is not always dependent on the ordering structure of (1-X)Ba(Mg1/3Ta2/3)O3-XBaSnO3.
Title: Ba(Mg, Ta)O3-BaSnO3 High-Q Dielectric Resonator
Description:
Dense ceramics with the chemical formula (1-X)Ba(Mg1/3Ta2/3)O3-XBaSnO3(X=0-0.
15) are prepared for use as dielectric resonators.
The obtained dielectric constant and Q value for Ba(Mg1/3Ta2/3)O3 were 24 and 43000 at 10 GHz, respectively.
As X increased from 0 to 0.
15, the temperature coefficient of resonant frequency decreased gradually from 5.
4 to -0.
5 ppm/ °C.
At X=0.
05, the Q value decreased drastically, and at X=0.
10-0.
15, the Q value increased to 33000 at 10 GHz.
The specimens were investigated by scanning electron microscopy and X-ray diffraction analysis.
It is found that Q improvement is not always dependent on the ordering structure of (1-X)Ba(Mg1/3Ta2/3)O3-XBaSnO3.
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