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Cylindrical Dielectric Resonator as Dielectric Matching on Microwave Amplifier for the Unconditionally Stable and Conditionally Stable Transistor at 5 GHz Frequency
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Stability and matching techniques on microwave amplifier have been an important consideration to maintain their required performances, but typically its frequency dependent. Thus, a frequency variable mechanism is required. The dielectric matching employing the stability and matching techniques on microwave amplifier with cylindrical dielectric resonator has been investigated and realized. The cylindrical dielectric resonator (CDR) with parallel microstrip lines is proposed at 5 GHz frequency for unconditionally stable and conditionally stable transistor as dielectric matching. Hence, the proposed dielectric resonator with +2 mm spacing and 155˚ of curved configuration indicated the best performances for preliminary study. The result improves the performance of the parallel inhomogeneous CDR by 9.77%. Subsequently, the homogeneous CDR is also successfully working as the variable frequency mechanism for unconditionally stable and conditionally stable transistor at 5 GHz frequency in maintaining their stability performances.
Title: Cylindrical Dielectric Resonator as Dielectric Matching on Microwave Amplifier for the Unconditionally Stable and Conditionally Stable Transistor at 5 GHz Frequency
Description:
Stability and matching techniques on microwave amplifier have been an important consideration to maintain their required performances, but typically its frequency dependent.
Thus, a frequency variable mechanism is required.
The dielectric matching employing the stability and matching techniques on microwave amplifier with cylindrical dielectric resonator has been investigated and realized.
The cylindrical dielectric resonator (CDR) with parallel microstrip lines is proposed at 5 GHz frequency for unconditionally stable and conditionally stable transistor as dielectric matching.
Hence, the proposed dielectric resonator with +2 mm spacing and 155˚ of curved configuration indicated the best performances for preliminary study.
The result improves the performance of the parallel inhomogeneous CDR by 9.
77%.
Subsequently, the homogeneous CDR is also successfully working as the variable frequency mechanism for unconditionally stable and conditionally stable transistor at 5 GHz frequency in maintaining their stability performances.
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