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Non-Alloyed Ge/Pd Contacts for AlAs/GaAs Resonant Tunneling Structures
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Resonant AlAs/GaAs/AlAs tunneling diodes with very thin top contact layers have been fabricated using non-alloyed Ge/Pd/n ohmic contacts. The current-voltage characteristics of a set of resonant tunneling diodes that only differed in the thickness of the top contact layer clarify the action range of separate processes taking place during contact formation. Resonant tunneling performance is still observed in structures with contact layers as thin as 10 nm. Device applications that require the contacting of a very thin layer can therefore benefit most from this contact scheme.
Title: Non-Alloyed Ge/Pd Contacts for AlAs/GaAs Resonant Tunneling Structures
Description:
Resonant AlAs/GaAs/AlAs tunneling diodes with very thin top contact layers have been fabricated using non-alloyed Ge/Pd/n ohmic contacts.
The current-voltage characteristics of a set of resonant tunneling diodes that only differed in the thickness of the top contact layer clarify the action range of separate processes taking place during contact formation.
Resonant tunneling performance is still observed in structures with contact layers as thin as 10 nm.
Device applications that require the contacting of a very thin layer can therefore benefit most from this contact scheme.
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