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Deposition of aluminum oxide layer on GaN using diethyl aluminum ethoxide as a precursor
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We performed a feasibility study on the deposition of aluminum oxides (AlOx) on GaN using diethyl aluminum ethoxide [(C2H5)2AlOC2H5] as a precursor by electron-cyclotron-resonance-assisted chemical vapor deposition. We determined the refractive index and permittivity of the deposited AlOx layer to be 1.59 and 8.3, respectively. An x-ray photoelectron spectroscopy (XPS) study showed that the energy positions of the Al- and O-core levels were very close to those of the reference crystalline Al2O3 and that there was no significant peak related to carbon in the AlOx film. XPS also indicated a bandgap of 7.0 eV and oxygen composition of 1.48 for the AlOx layer deposited on GaN. We found good capacitance-voltage (C-V) behavior for the Ni/AlOx/n-GaN diode including accumulation and depletion behavior at room temperature. Even at high temperatures, the C-V slope remained unchanged indicating relatively low interface state densities near the midgap.
Title: Deposition of aluminum oxide layer on GaN using diethyl aluminum ethoxide as a precursor
Description:
We performed a feasibility study on the deposition of aluminum oxides (AlOx) on GaN using diethyl aluminum ethoxide [(C2H5)2AlOC2H5] as a precursor by electron-cyclotron-resonance-assisted chemical vapor deposition.
We determined the refractive index and permittivity of the deposited AlOx layer to be 1.
59 and 8.
3, respectively.
An x-ray photoelectron spectroscopy (XPS) study showed that the energy positions of the Al- and O-core levels were very close to those of the reference crystalline Al2O3 and that there was no significant peak related to carbon in the AlOx film.
XPS also indicated a bandgap of 7.
0 eV and oxygen composition of 1.
48 for the AlOx layer deposited on GaN.
We found good capacitance-voltage (C-V) behavior for the Ni/AlOx/n-GaN diode including accumulation and depletion behavior at room temperature.
Even at high temperatures, the C-V slope remained unchanged indicating relatively low interface state densities near the midgap.
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