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Picosecond Time-Resolved Spectroscopy of Exciton Systems in CuGaS2 Bulk Single Crystals
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The decay times of bound-exciton emissions in CuGaS2 bulk crystals grown by iodine transport were measured by picosecond time-resolved spectroscopy as a function of temperature. The CuGaS2 crystals examined in this study showed two bound-exciton emission lines at 2.493 and 2.496 eV at low temperatures. Experimental results were analyzed with rate equations on the exciton kinetics using two models of free-exciton oscillator strength: strength per excitonic volume and strength per CuGaS2 molecule. Reasonable values of capture center densities and capture cross sections for the free exciton for the exciton-binding centers were obtained when using the oscillator strength per free-excitonic volume. The capture cross sections were ∼10-14 cm2 and the capture center densities were ∼1016 cm-3.
Title: Picosecond Time-Resolved Spectroscopy of Exciton Systems in CuGaS2 Bulk Single Crystals
Description:
The decay times of bound-exciton emissions in CuGaS2 bulk crystals grown by iodine transport were measured by picosecond time-resolved spectroscopy as a function of temperature.
The CuGaS2 crystals examined in this study showed two bound-exciton emission lines at 2.
493 and 2.
496 eV at low temperatures.
Experimental results were analyzed with rate equations on the exciton kinetics using two models of free-exciton oscillator strength: strength per excitonic volume and strength per CuGaS2 molecule.
Reasonable values of capture center densities and capture cross sections for the free exciton for the exciton-binding centers were obtained when using the oscillator strength per free-excitonic volume.
The capture cross sections were ∼10-14 cm2 and the capture center densities were ∼1016 cm-3.
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