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Characteristics and Applications of CAAC-IGZO FET with Gate Length of 13nm
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A field-effect transistor (FET) with a gate length of 13 nm having a c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) channel was fabricated. The CAAC-IGZO FET has an off-state leakage current of 200 yA/μm, a cutoff frequency of 60GHz, and a maximum oscillation frequency of 16GHz. A CAAC-IGZO FET, though it is a small transistor, withstands voltages up to approximately 2.5 V. It also has stable current characteristics with less temperature dependence than Si devices. We have constructed an equivalent-circuit model of the CAAC-IGZO FET and designed an RF amplifier to show CAAC-IGZO FET's applicability to the GHz-range RF circuitry.
Title: Characteristics and Applications of CAAC-IGZO FET with Gate Length of 13nm
Description:
A field-effect transistor (FET) with a gate length of 13 nm having a c-axis aligned crystalline In-Ga-Zn oxide (CAAC-IGZO) channel was fabricated.
The CAAC-IGZO FET has an off-state leakage current of 200 yA/μm, a cutoff frequency of 60GHz, and a maximum oscillation frequency of 16GHz.
A CAAC-IGZO FET, though it is a small transistor, withstands voltages up to approximately 2.
5 V.
It also has stable current characteristics with less temperature dependence than Si devices.
We have constructed an equivalent-circuit model of the CAAC-IGZO FET and designed an RF amplifier to show CAAC-IGZO FET's applicability to the GHz-range RF circuitry.
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