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In situ ultraviolet photoemission spectroscopy measurement of the pentacene-RuO2/Ti contact energy structure
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In situ ultraviolet photoemission spectroscopy was used during the pentacene layer growth on ruthenium and ruthenium oxide films to measure the energy barrier in the metal-semiconductor contact. The measurement showed that ruthenium oxide film formed lower hole-injection barrier with pentacene than ruthenium or gold metal film due to its high work function of 4.92 eV and low resistivity of ∼350 μΩ cm. Pentacene thin film transistor with ruthenium oxide electrode showed higher mobility of 0.435 cm2/V s and on-off ratio of 106 than ruthenium (μ: 0.205 cm2/V s, on/off ratio: 106) or gold electrode (μ: 0.338 cm2/V s, on/off ratio: 106) of the same structure.
Title: In situ ultraviolet photoemission spectroscopy measurement of the pentacene-RuO2/Ti contact energy structure
Description:
In situ ultraviolet photoemission spectroscopy was used during the pentacene layer growth on ruthenium and ruthenium oxide films to measure the energy barrier in the metal-semiconductor contact.
The measurement showed that ruthenium oxide film formed lower hole-injection barrier with pentacene than ruthenium or gold metal film due to its high work function of 4.
92 eV and low resistivity of ∼350 μΩ cm.
Pentacene thin film transistor with ruthenium oxide electrode showed higher mobility of 0.
435 cm2/V s and on-off ratio of 106 than ruthenium (μ: 0.
205 cm2/V s, on/off ratio: 106) or gold electrode (μ: 0.
338 cm2/V s, on/off ratio: 106) of the same structure.
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