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Silicon-on-Insulator (SOI) Lateral Power-Reduced Surface Field FinFET with High-Power Figure of Merit of 239.3 MW/cm2
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In this study, we propose a lateral power-reduced surface field FinFET (LPR-FinFET) to achieve high breakdown voltage and low on-resistance. We investigate the electric field distribution within the reduced surface field (RESURF) structure under reverse-biased conditions, as well as forward transfer and output characteristics using TCAD simulation. The proposed LPR-FinFET demonstrates a high breakdown voltage of 247 V and a low specific on-resistance of 0.255 mΩ·cm2 with a high-power figure of merit of 239.3 MW/cm2. The superior characteristics of our proposed LPR-FinFET show the potential for applications as a lateral power semiconductor using silicon-on-insulator (SOI) technology.
Title: Silicon-on-Insulator (SOI) Lateral Power-Reduced Surface Field FinFET with High-Power Figure of Merit of 239.3 MW/cm2
Description:
In this study, we propose a lateral power-reduced surface field FinFET (LPR-FinFET) to achieve high breakdown voltage and low on-resistance.
We investigate the electric field distribution within the reduced surface field (RESURF) structure under reverse-biased conditions, as well as forward transfer and output characteristics using TCAD simulation.
The proposed LPR-FinFET demonstrates a high breakdown voltage of 247 V and a low specific on-resistance of 0.
255 mΩ·cm2 with a high-power figure of merit of 239.
3 MW/cm2.
The superior characteristics of our proposed LPR-FinFET show the potential for applications as a lateral power semiconductor using silicon-on-insulator (SOI) technology.
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