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A Simulation Method for Memristor Based Dopant Drift Model
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Memristor is a kind of circuit element with nano scale, its appearance may radically change the traditional circuit. Recently, dopant drift model is a hot issue in research works connected to memristor. However, because of lack of transparency in the process of simulation, simulation method on dopant drift model of memristor needs to be strengthened. Dopant drift model was analyzed, circuit characteristics and relations between different circuit variables were studied. Based on those works above, a kind of numerical simulation method was designed to simulate and validate the memristor model. Simulation results show that the method designed accurately expresses conducting behaviour of memristor physical model, which provides a new feasible way for simulations of memristor model.
Title: A Simulation Method for Memristor Based Dopant Drift Model
Description:
Memristor is a kind of circuit element with nano scale, its appearance may radically change the traditional circuit.
Recently, dopant drift model is a hot issue in research works connected to memristor.
However, because of lack of transparency in the process of simulation, simulation method on dopant drift model of memristor needs to be strengthened.
Dopant drift model was analyzed, circuit characteristics and relations between different circuit variables were studied.
Based on those works above, a kind of numerical simulation method was designed to simulate and validate the memristor model.
Simulation results show that the method designed accurately expresses conducting behaviour of memristor physical model, which provides a new feasible way for simulations of memristor model.
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