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Annealing Effects on (NH4)2Sx-Treated GaAs(001) and InP(001) Surfaces
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Chemical state changes and desorption properties of S atoms in (NH4)2S
x
-treated GaAs(001) and InP(001) surfaces are studied using soft X-ray photoelectron spectroscopy (SXPES) and thermal desorption spectroscopy (TDS). It was revealed by SXPES that (NH4)2S
x
-treated and deionized-water-rinsed GaAs(001) and InP(001) surfaces, after annealing at 400° C, are completely terminated by S-Ga and In-S bonds, respectively. Desorption peaks of S atoms are observed at 560° C for S/GaAs(001) and 460° C for S/InP(001) in TDS spectra. Desorption of V-elements, such as As and P atoms, is hindered by the S passivation.
Title: Annealing Effects on (NH4)2Sx-Treated GaAs(001) and InP(001) Surfaces
Description:
Chemical state changes and desorption properties of S atoms in (NH4)2S
x
-treated GaAs(001) and InP(001) surfaces are studied using soft X-ray photoelectron spectroscopy (SXPES) and thermal desorption spectroscopy (TDS).
It was revealed by SXPES that (NH4)2S
x
-treated and deionized-water-rinsed GaAs(001) and InP(001) surfaces, after annealing at 400° C, are completely terminated by S-Ga and In-S bonds, respectively.
Desorption peaks of S atoms are observed at 560° C for S/GaAs(001) and 460° C for S/InP(001) in TDS spectra.
Desorption of V-elements, such as As and P atoms, is hindered by the S passivation.
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