Javascript must be enabled to continue!
Evaluation of surface potential barriers after activation of GaAs photocathode
View through CrossRef
According to the ratios of the peak-values of photocurrents arising separately during the single Cs activation and during the Cs-O activation for negative electron affinity(NEA) GaAs photocathode, and the theoretical energy distributions of the photoelectrons passing separately through the single and the double potential barriers, a new method of evaluating the surface potential barrier parameters of NEA GaAs photocathode is presented. The results obtained by this method accord well with the double-dipole model theory and are in agreement with the results by fitting the experimental electrons energy distribution curve. The method is simple and efficave, which enriches the approaches to the evaluation of activation effect and surface characteristic of NEA GaAs photocathodes without increasing other test means.
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Title: Evaluation of surface potential barriers after activation of GaAs photocathode
Description:
According to the ratios of the peak-values of photocurrents arising separately during the single Cs activation and during the Cs-O activation for negative electron affinity(NEA) GaAs photocathode, and the theoretical energy distributions of the photoelectrons passing separately through the single and the double potential barriers, a new method of evaluating the surface potential barrier parameters of NEA GaAs photocathode is presented.
The results obtained by this method accord well with the double-dipole model theory and are in agreement with the results by fitting the experimental electrons energy distribution curve.
The method is simple and efficave, which enriches the approaches to the evaluation of activation effect and surface characteristic of NEA GaAs photocathodes without increasing other test means.
Related Results
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface morphologies of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy were studied using atomic force microscopy. The surface of a GaAs layer gr...
Analysis of the relation between spectral response and absorptivity of GaAs photocathode
Analysis of the relation between spectral response and absorptivity of GaAs photocathode
In order to study the relation between spectral response and absorptivity of GaAs photocathode, two kinds of GaAs photocathodes are prepared by molecular beam epitaxy (MBE) and met...
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
Sublattice reversal epitaxy is demonstrated in lattice-matched
GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed
by reflection high energy elec...
Single layer graphene protective layer on GaAs photocathodes for spin-polarized electron source
Single layer graphene protective layer on GaAs photocathodes for spin-polarized electron source
GaAs-based photocathodes are the primary choice for polarized electron sources, commonly used in polarized electron microscopes and polarized positron sources. GaAs photocathodes a...
Adsorption efficiency of cesium in activation process for GaAs photocathode
Adsorption efficiency of cesium in activation process for GaAs photocathode
Photocathode materials with the lower surface doping density need a longer time to raise photocurrent in the first Cesium activation process when the system vacuum level is not hig...
Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy
Continuous GaAs Film Growth on Epitaxial Si Surface in Initial Stage of GaAs/Si Heteroepitaxy
Improvements in the initial stage of GaAs growth on the epitaxial silicon surface without high-temperature Si surface treatment and in the GaAs-Si interface have been observed for ...
Increase of Critical Thickness and Optical Emission Range in (InAs)1(GaAs)n Strained Short-Period Superlattices
Increase of Critical Thickness and Optical Emission Range in (InAs)1(GaAs)n Strained Short-Period Superlattices
The critical thickness and optical emission wavelength range of (InAs)1(GaAs)
n
strained sho...
An Electrospun Porous CuBi2O4 Nanofiber Photocathode for Efficient Solar Water Splitting
An Electrospun Porous CuBi2O4 Nanofiber Photocathode for Efficient Solar Water Splitting
While the CuBi2O4-based photocathode has emerged as an ideal candidate for photoelectrochemical water splitting, it is still far from its theoretical values due to poor charge carr...

