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Direct modulation of a single InP/InAs nanowire light-emitting diode
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Telecom-band single nanowire (NW) light-emitting diodes (LEDs) on silicon platforms are promising for use as future on-chip light sources. To realize such an LED, we grew p-i-n junction InP/InAs NWs by the vapor-liquid-solid method and used them to fabricate single NW-LED composites on Si wafers. Using a micro-photoluminescence system and a current injection probe setup, we were able to estimate the optical and electrical properties. In addition, we demonstrated the dynamic signal modulation capabilities of our device through a digital eye diagram with a pseudorandom binary sequence signal. This telecom-band single NW-LED employing Gbps signal modulation has the potential for use as an on-chip light source.
Title: Direct modulation of a single InP/InAs nanowire light-emitting diode
Description:
Telecom-band single nanowire (NW) light-emitting diodes (LEDs) on silicon platforms are promising for use as future on-chip light sources.
To realize such an LED, we grew p-i-n junction InP/InAs NWs by the vapor-liquid-solid method and used them to fabricate single NW-LED composites on Si wafers.
Using a micro-photoluminescence system and a current injection probe setup, we were able to estimate the optical and electrical properties.
In addition, we demonstrated the dynamic signal modulation capabilities of our device through a digital eye diagram with a pseudorandom binary sequence signal.
This telecom-band single NW-LED employing Gbps signal modulation has the potential for use as an on-chip light source.
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