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Low Temperature Growth of GaAs and InAs/GaAs Quantum Well on (111)B Substrate by Metalorganic Vapor Phase Epitaxy
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Metalorganic vapor phase epitaxy of InAs quantum wells on GaAs (111)B substrate is investigated by simultaneous monitoring of surface photo-absorption. To lower the growth temperature of the GaAs barrier, we adopted the flow-rate-modulation method and obtained specular morphology of GaAs at 600° C. Indium segregation is confirmed by surface photo-absorption and suppressed by introducing a capping layer grown under an arsenic rich condition. We obtained a one-monolayer InAs/GaAs quantum well, and confirmed its abrupt interfaces by TEM and a photoluminescence narrower than 6 meV.
Title: Low Temperature Growth of GaAs and InAs/GaAs Quantum Well on (111)B Substrate by Metalorganic Vapor Phase Epitaxy
Description:
Metalorganic vapor phase epitaxy of InAs quantum wells on GaAs (111)B substrate is investigated by simultaneous monitoring of surface photo-absorption.
To lower the growth temperature of the GaAs barrier, we adopted the flow-rate-modulation method and obtained specular morphology of GaAs at 600° C.
Indium segregation is confirmed by surface photo-absorption and suppressed by introducing a capping layer grown under an arsenic rich condition.
We obtained a one-monolayer InAs/GaAs quantum well, and confirmed its abrupt interfaces by TEM and a photoluminescence narrower than 6 meV.
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