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Step-Free Surface Grown on GaAs (111)B Substrate by Local Metalorganic Vapor Phase Epitaxy
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In this paper we describe the realization of a step-free surface by local metalorganic vapor phase epitaxy (MOVPE) on (111)B GaAs surface. Surface stoichiometry is controlled by employing the surface photo-absorption method (SPA). High-temperature growth at 800° C on stable GaAs (111)B and a cooling procedure under the (2×2)-like surface conditions result in a step-free surface exceeding 10 µ m in diameter on the selectively grown GaAs mesa. Low two-dimensional nucleus density on the (111)B surface is demonstrated to illustrate the mechanism by which a wide step-free area is obtained, and step generation due to surface phase transition is also discussed.
Title: Step-Free Surface Grown on GaAs (111)B Substrate by Local Metalorganic Vapor Phase Epitaxy
Description:
In this paper we describe the realization of a step-free surface by local metalorganic vapor phase epitaxy (MOVPE) on (111)B GaAs surface.
Surface stoichiometry is controlled by employing the surface photo-absorption method (SPA).
High-temperature growth at 800° C on stable GaAs (111)B and a cooling procedure under the (2×2)-like surface conditions result in a step-free surface exceeding 10 µ m in diameter on the selectively grown GaAs mesa.
Low two-dimensional nucleus density on the (111)B surface is demonstrated to illustrate the mechanism by which a wide step-free area is obtained, and step generation due to surface phase transition is also discussed.
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