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The effect of baking temperature on the crystal structure and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by sol-gel processing
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The crystal structures, surface morphology and ferroelectric properties of Bi3.25La0.75Ti3O12 (BLT) thin films were found to be greatly affected by the baking temperature during sol-gel processing. At lower baking temperatures, the (117) orientation in the BLT thin film was preferred. However, with the increase of baking temperature, the (117) diffraction peak became weaker. In addition, the surface morphology of the films changed from rodlike to platelike. The ferroelectric properties were measured and it was found that the BLT thin film has the largest remnant polarization (2Pr) 284μC/cm2 prepared at a baking temperature of 250℃.
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Title: The effect of baking temperature on the crystal structure and ferroelectric properties of Bi3.25La0.75Ti3O12 thin films prepared by sol-gel processing
Description:
The crystal structures, surface morphology and ferroelectric properties of Bi3.
25La0.
75Ti3O12 (BLT) thin films were found to be greatly affected by the baking temperature during sol-gel processing.
At lower baking temperatures, the (117) orientation in the BLT thin film was preferred.
However, with the increase of baking temperature, the (117) diffraction peak became weaker.
In addition, the surface morphology of the films changed from rodlike to platelike.
The ferroelectric properties were measured and it was found that the BLT thin film has the largest remnant polarization (2Pr) 284μC/cm2 prepared at a baking temperature of 250℃.
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