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Electromechanical properties of Nd-doped Bi4Ti3O12 films: A candidate for lead-free thin-film piezoelectrics
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Neodymium-doped Bi4Ti3O12 (BNT) films are evaluated for use as lead-free thin-film piezoelectrics in microelectromechanical systems. Bi4Ti3O12, Bi3.25La0.75Ti3O12, and Bi3.25Nd0.75Ti3O12 films were fabricated by chemical solution deposition on Pt/TiOx/SiO2/Si substrates. Nd substitution promoted random orientation with low (00l) diffraction peaks. The 1-μm-thick Bi3.25Nd0.75Ti3O12 film annealed at 750 °C exhibited a remanent polarization of 26 μC/cm2. Typical butterfly field-induced strain loops were obtained in the BNT film capacitors. The electrically induced strain is 8.4×10−4 under the bipolar driving field of 220 kV/cm. These results show that BNT is a promising candidate for use in lead-free thin-film piezoelectrics.
Title: Electromechanical properties of Nd-doped Bi4Ti3O12 films: A candidate for lead-free thin-film piezoelectrics
Description:
Neodymium-doped Bi4Ti3O12 (BNT) films are evaluated for use as lead-free thin-film piezoelectrics in microelectromechanical systems.
Bi4Ti3O12, Bi3.
25La0.
75Ti3O12, and Bi3.
25Nd0.
75Ti3O12 films were fabricated by chemical solution deposition on Pt/TiOx/SiO2/Si substrates.
Nd substitution promoted random orientation with low (00l) diffraction peaks.
The 1-μm-thick Bi3.
25Nd0.
75Ti3O12 film annealed at 750 °C exhibited a remanent polarization of 26 μC/cm2.
Typical butterfly field-induced strain loops were obtained in the BNT film capacitors.
The electrically induced strain is 8.
4×10−4 under the bipolar driving field of 220 kV/cm.
These results show that BNT is a promising candidate for use in lead-free thin-film piezoelectrics.
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