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X-Ray Diffraction Study of ZnSe(111) Films Grown on GaAs(111)A Substrates by Molecular Beam Epitaxy
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ZnSe(111) films grown on GaAs(111)A substrates were studied by X-ray diffraction measurement. The [111] axis of ZnSe epilayers was tilted toward the [100] direction when the films were grown on 5°- and 10°-misoriented substrates toward the [100] direction. However, such tilting was not observed in the epilayers grown on just-oriented substrates. The lattice spacing d
111 of the epilayers was measured and the lattice deformation and relaxation were studied.
Title: X-Ray Diffraction Study of ZnSe(111) Films Grown on GaAs(111)A Substrates by Molecular Beam Epitaxy
Description:
ZnSe(111) films grown on GaAs(111)A substrates were studied by X-ray diffraction measurement.
The [111] axis of ZnSe epilayers was tilted toward the [100] direction when the films were grown on 5°- and 10°-misoriented substrates toward the [100] direction.
However, such tilting was not observed in the epilayers grown on just-oriented substrates.
The lattice spacing d
111 of the epilayers was measured and the lattice deformation and relaxation were studied.
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