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A study of the selective gate recess etching technology and its effects on the microwave properties of pHEMT
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AbstractThe selective gate recess etching technology has been investigated extensively using citric acid and H2O2 etchant for AlGaAs/InGaAs/GaAs pHEMT in this paper. A suitable ratio of this etchant has been determined by experiment. Then we studied the effect of the gate recess depth on the microwave properties of a 0.8 μm gate length pHEMT. The recess depth was varied by changing the recess etch time, and was measured by Taylor–Hobson test instruments. © 2001 John Wiley & Sons, Inc. Microwave Opt Technol Lett 30: 410–412, 2001.
Title: A study of the selective gate recess etching technology and its effects on the microwave properties of pHEMT
Description:
AbstractThe selective gate recess etching technology has been investigated extensively using citric acid and H2O2 etchant for AlGaAs/InGaAs/GaAs pHEMT in this paper.
A suitable ratio of this etchant has been determined by experiment.
Then we studied the effect of the gate recess depth on the microwave properties of a 0.
8 μm gate length pHEMT.
The recess depth was varied by changing the recess etch time, and was measured by Taylor–Hobson test instruments.
© 2001 John Wiley & Sons, Inc.
Microwave Opt Technol Lett 30: 410–412, 2001.
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