Search engine for discovering works of Art, research articles, and books related to Art and Culture
ShareThis
Javascript must be enabled to continue!

The Overshot Gate as a Flow-Measuring Device

View through CrossRef
The overshot gate is a commonly used adjustable overflow weir for regulating the upstream water level in open channels. The amount of gate movement is proportional to the water level change. However, to effectively manage the water flow, it is also important for operators to accurately measure the flow rate in the channel. This study examines an overshot gate installed at the end of a laboratory flume to estimate the flow rate under various free flow conditions. This study investigates different gate angles ranging from 9.6° to 90° to evaluate their impact on the flow properties and the discharge coefficient. The analysis of the results indicates that the maximum flow rate values can be achieved with gate inclinations from 15.5° to 47.2° with relatively lower head; the inclined alignment of the gate decreases the effective gate height which consequently increases the gate efficiency. The use of the overshot gate is advantageous over the normal gate when channel depth is limited and higher discharge is required at relatively lower head. In this study, at the highest gate inclinations, the water surface is significantly stable having the lowest values of the approach Froude number. In addition, the head to gate height ratio decreases with raising the gate due to the reduced vertical contraction of the channel. Finally, this paper proposes an empirical equation for estimating the discharge coefficient based on the gate inclination, which demonstrates good accuracy in the specified range.
Title: The Overshot Gate as a Flow-Measuring Device
Description:
The overshot gate is a commonly used adjustable overflow weir for regulating the upstream water level in open channels.
The amount of gate movement is proportional to the water level change.
However, to effectively manage the water flow, it is also important for operators to accurately measure the flow rate in the channel.
This study examines an overshot gate installed at the end of a laboratory flume to estimate the flow rate under various free flow conditions.
This study investigates different gate angles ranging from 9.
6° to 90° to evaluate their impact on the flow properties and the discharge coefficient.
The analysis of the results indicates that the maximum flow rate values can be achieved with gate inclinations from 15.
5° to 47.
2° with relatively lower head; the inclined alignment of the gate decreases the effective gate height which consequently increases the gate efficiency.
The use of the overshot gate is advantageous over the normal gate when channel depth is limited and higher discharge is required at relatively lower head.
In this study, at the highest gate inclinations, the water surface is significantly stable having the lowest values of the approach Froude number.
In addition, the head to gate height ratio decreases with raising the gate due to the reduced vertical contraction of the channel.
Finally, this paper proposes an empirical equation for estimating the discharge coefficient based on the gate inclination, which demonstrates good accuracy in the specified range.

Related Results

Notched Gate and Graded Gate Oxide Processing for Reduced Capacitance Application in RF MOSFETs
Notched Gate and Graded Gate Oxide Processing for Reduced Capacitance Application in RF MOSFETs
As the demands of RF applications are rising, optimization of internal MOSFETs capacitances is a key issue to improve the cut-off frequency. In this abstract we report the developm...
Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors
Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors
In this work, we investigated the degradation of the p-GaN gate stack induced by the forward gate voltage stress in normally off AlGaN/GaN high electron mobility transistors (HEMTs...
FinFET Devices and Integration
FinFET Devices and Integration
Through more than a decade of industry wide R&D effort, 3D-FinFET has found its way into manufacturing. In this abstract, we review the key progress in process and integration ...
Numerical analysis of low-tech overshot water wheel for off grid purpose
Numerical analysis of low-tech overshot water wheel for off grid purpose
Abstract The rural areas of Nepal comprise of many rivers and rivulets which is not properly utilized till yet. In Nepal, the focus is set on overshot waterwheel due...
Mobile application for gate pass management system enhancement
Mobile application for gate pass management system enhancement
Gate pass management is an essential measure to keep records of people's entrance and exit of company premises. Technological improvement steered gate pass management from paper-ba...
Impact of Gate Microstructure on Complementary Metal-Oxide-Semiconductor Transistor Performance
Impact of Gate Microstructure on Complementary Metal-Oxide-Semiconductor Transistor Performance
This letter reports on the impact of gate microstructure on deep-submicron complementary metal-oxide-semiconductor (CMOS) device performance. Transistors with different gate micr...

Back to Top