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Shear Thickening Polishing of Quartz Glass

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Quartz glass is a typical optical material. In this research, colloidal silica (SiO2) and colloidal cerium oxide (CeO2) are used as abrasive grains to polish quartz glass in the shear thickening polishing (STP) process. The STP method employs the shear-thickening mechanism of non-Newtonian power-law fluid to achieve high-efficiency and high-quality polishing. The different performance in material removal and surface roughness between SiO2 and CeO2 slurries was analyzed. The influence of the main factors including polishing speed, abrasive concentration, and pH value on the MRR, workpiece surface roughness, and the surface topography was discussed. Two different slurries can both achieve fine quartz surface in shear thickening polishing with the polishing speed 100 rpm, and pH value 8. The quartz glass surface roughness Ra decreases from 120 ± 10 to 2.3 nm in 14 minutes’ polishing with 8 wt% 80 nm SiO2 slurry, and the MRR reaches 121.6 nm/min. The quartz glass surface roughness Ra decreases from 120 ± 10 to 2.1 nm in 12 minutes polishing by 6 wt% 100 nm CeO2 slurry and the MRR reaches 126.2 nm/min.
Title: Shear Thickening Polishing of Quartz Glass
Description:
Quartz glass is a typical optical material.
In this research, colloidal silica (SiO2) and colloidal cerium oxide (CeO2) are used as abrasive grains to polish quartz glass in the shear thickening polishing (STP) process.
The STP method employs the shear-thickening mechanism of non-Newtonian power-law fluid to achieve high-efficiency and high-quality polishing.
The different performance in material removal and surface roughness between SiO2 and CeO2 slurries was analyzed.
The influence of the main factors including polishing speed, abrasive concentration, and pH value on the MRR, workpiece surface roughness, and the surface topography was discussed.
Two different slurries can both achieve fine quartz surface in shear thickening polishing with the polishing speed 100 rpm, and pH value 8.
The quartz glass surface roughness Ra decreases from 120 ± 10 to 2.
3 nm in 14 minutes’ polishing with 8 wt% 80 nm SiO2 slurry, and the MRR reaches 121.
6 nm/min.
The quartz glass surface roughness Ra decreases from 120 ± 10 to 2.
1 nm in 12 minutes polishing by 6 wt% 100 nm CeO2 slurry and the MRR reaches 126.
2 nm/min.

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