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Study on Polishing Characteristics of Pyramidal Structured Polishing Pad
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We conducted a polishing test to clarify the change in polishing characteristics resulting from the wear of a pyramidal-structured polishing tool, and discuss the polishing mechanism unique to the pyramidal-structured polishing pad. When the pyramidal-structured polishing pad is used for polishing, there exists an initial polishing stage in which the removal rate is high but the finished surface is rough; followed by a steady-state polishing stage in which the wear rate is low, removal rate is stable, and a high-quality finish is obtained. The true polishing pressure is constant in the steady-state polishing stage regardless of the nominal polishing pressure, although it differs with workpiece hardness. Polishing was carried out using the pyramidal-structured polishing pad containing 6 μm alumina abrasive grains for 90 min without any scorching or clogging. This resulted in finished surfaces of 0.4 μmRzand 0.07 μmRzfor oxygen-free copper and S45C, respectively.
Fuji Technology Press Ltd.
Title: Study on Polishing Characteristics of Pyramidal Structured Polishing Pad
Description:
We conducted a polishing test to clarify the change in polishing characteristics resulting from the wear of a pyramidal-structured polishing tool, and discuss the polishing mechanism unique to the pyramidal-structured polishing pad.
When the pyramidal-structured polishing pad is used for polishing, there exists an initial polishing stage in which the removal rate is high but the finished surface is rough; followed by a steady-state polishing stage in which the wear rate is low, removal rate is stable, and a high-quality finish is obtained.
The true polishing pressure is constant in the steady-state polishing stage regardless of the nominal polishing pressure, although it differs with workpiece hardness.
Polishing was carried out using the pyramidal-structured polishing pad containing 6 μm alumina abrasive grains for 90 min without any scorching or clogging.
This resulted in finished surfaces of 0.
4 μmRzand 0.
07 μmRzfor oxygen-free copper and S45C, respectively.
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