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Degradation Phenomenon under Low Drain Voltage Stress in p-channel Metal-Oxide-Semiconductor Field-Effect-Transistors
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A new hot-carrier degradation of p-channel metal-oxide-semiconductor field-effect-transistors (pMOSFETs) under low drain voltage stress has been investigated. It is found that the degradation occurs under high gate voltage stress (HG stress) after avalanche hot-carrier injection (AHC injection) for pMOSFETs with thin gate oxide ( ∼10 nm). When AHC stress and HG stress are repeatedly imposed on pMOSFETs, the degradation of threshold voltage is enhanced. Moreover, this degradation under HG stress occurs even in areas where channel current does not flow. This enhanced degradation is strongly dependent on the cycle frequency and gate-to-drain voltage of HG stress. We have proposed a simple model based on the experimental results.
Title: Degradation Phenomenon under Low Drain Voltage Stress in p-channel Metal-Oxide-Semiconductor Field-Effect-Transistors
Description:
A new hot-carrier degradation of p-channel metal-oxide-semiconductor field-effect-transistors (pMOSFETs) under low drain voltage stress has been investigated.
It is found that the degradation occurs under high gate voltage stress (HG stress) after avalanche hot-carrier injection (AHC injection) for pMOSFETs with thin gate oxide ( ∼10 nm).
When AHC stress and HG stress are repeatedly imposed on pMOSFETs, the degradation of threshold voltage is enhanced.
Moreover, this degradation under HG stress occurs even in areas where channel current does not flow.
This enhanced degradation is strongly dependent on the cycle frequency and gate-to-drain voltage of HG stress.
We have proposed a simple model based on the experimental results.
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