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SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD
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The effect of an electric field on the subbands and excitons in a GaAs/Ga1-xAlxAs quantum well is studied by using a finite-potential-barrier model. The subbands of electrons and holes and the binding energies of excitons have been calculated for GaAs/Al0.34 Ga0.66 As quantum well (L = 105?) in electric field ranging from O to 1.2×105 V/cm. Based on these, the electron-hole overlap functions and the energy shifts of excitons corresponding to different subbands are obtained, they agree well with experimental results.
Acta Physica Sinica, Chinese Physical Society and Institute of Physics, Chinese Academy of Sciences
Title: SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD
Description:
The effect of an electric field on the subbands and excitons in a GaAs/Ga1-xAlxAs quantum well is studied by using a finite-potential-barrier model.
The subbands of electrons and holes and the binding energies of excitons have been calculated for GaAs/Al0.
34 Ga0.
66 As quantum well (L = 105?) in electric field ranging from O to 1.
2×105 V/cm.
Based on these, the electron-hole overlap functions and the energy shifts of excitons corresponding to different subbands are obtained, they agree well with experimental results.
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