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GaAs-Based Vertical-Cavity Surface-Emitting Laser on Si Substrate by Metalorganic Chemical Vapor Deposition
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We have fabricated an AlGaAs/GaAs surface emitting laser on a Si substrate by metalorganic chemical vapor deposition. A distributed Bragg reflector consisting of 23 periods of AlAs/Al0.1Ga0.9As semiconductor multilayers and a Au metal thin-film reflector are used as reflection mirrors of the Si substrate side and of the top side, respectively. The laser has a cavity which is three times as long as the lasing wavelength and has an Al0.3Ga0.7As/GaAs multi (10) quantum well structure. This laser exhibits a cw threshold current of 73 mA (3.7 kA/cm2) at 100 K. In addition, the lasing wavelength is 844 nm with a full width at half-maximum of 2.2 nm. To our knowledge, this surface emitting laser on Si is the first to be operated under cw conditions.
Title: GaAs-Based Vertical-Cavity Surface-Emitting Laser on Si Substrate by Metalorganic Chemical Vapor Deposition
Description:
We have fabricated an AlGaAs/GaAs surface emitting laser on a Si substrate by metalorganic chemical vapor deposition.
A distributed Bragg reflector consisting of 23 periods of AlAs/Al0.
1Ga0.
9As semiconductor multilayers and a Au metal thin-film reflector are used as reflection mirrors of the Si substrate side and of the top side, respectively.
The laser has a cavity which is three times as long as the lasing wavelength and has an Al0.
3Ga0.
7As/GaAs multi (10) quantum well structure.
This laser exhibits a cw threshold current of 73 mA (3.
7 kA/cm2) at 100 K.
In addition, the lasing wavelength is 844 nm with a full width at half-maximum of 2.
2 nm.
To our knowledge, this surface emitting laser on Si is the first to be operated under cw conditions.
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