Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Comparative Analysis of Various Parameters of Tri-Gate MOSFET with High-K Spacer
View through CrossRef
In this paper, a comparative analysis of the Tri-gate MOSFET device structure with respect to Single Material Gate (SMG) Tri-gate MOSFET, Double Material Gate (DMG) Tri-gate MOSFET and Triple Material Gate (TMG) Tri-gate MOSFET with & without Hafnium dioxide as high-K dielectric material is employed using Silvaco TCAD Atlas Tool. It shows a compact model and better DC, AC performance for triple material gate structures and yields a high drive current of the device for TMG Tri-gate MOSFET with high-k dielectrics and shows a better electrical characteristics in comparison with other device structures.
Title: Comparative Analysis of Various Parameters of Tri-Gate MOSFET with High-K Spacer
Description:
In this paper, a comparative analysis of the Tri-gate MOSFET device structure with respect to Single Material Gate (SMG) Tri-gate MOSFET, Double Material Gate (DMG) Tri-gate MOSFET and Triple Material Gate (TMG) Tri-gate MOSFET with & without Hafnium dioxide as high-K dielectric material is employed using Silvaco TCAD Atlas Tool.
It shows a compact model and better DC, AC performance for triple material gate structures and yields a high drive current of the device for TMG Tri-gate MOSFET with high-k dielectrics and shows a better electrical characteristics in comparison with other device structures.
Related Results
Notched Gate and Graded Gate Oxide Processing for Reduced Capacitance Application in RF MOSFETs
Notched Gate and Graded Gate Oxide Processing for Reduced Capacitance Application in RF MOSFETs
As the demands of RF applications are rising, optimization of internal MOSFETs capacitances is a key issue to improve the cut-off frequency. In this abstract we report the developm...
Primerjalna književnost na prelomu tisočletja
Primerjalna književnost na prelomu tisočletja
In a comprehensive and at times critical manner, this volume seeks to shed light on the development of events in Western (i.e., European and North American) comparative literature ...
Nonlinear Vibrations of Model PWR Fuel Assemblies: Part 2 — Interpretation of Results Using Bilinear Stiffness Model
Nonlinear Vibrations of Model PWR Fuel Assemblies: Part 2 — Interpretation of Results Using Bilinear Stiffness Model
Abstract
The experimental response of fuel rods with spacer grids was interpreted using a bilinear hysteresis model. Nonlinear experimental responses of two configur...
The Overshot Gate as a Flow-Measuring Device
The Overshot Gate as a Flow-Measuring Device
The overshot gate is a commonly used adjustable overflow weir for regulating the upstream water level in open channels. The amount of gate movement is proportional to the water lev...
Mechanisms of action of thioredoxin reductase inhibitors in the context of cancer
Mechanisms of action of thioredoxin reductase inhibitors in the context of cancer
<p dir="ltr">The increased understanding of the role of redox homeostasis in cancer survival and progression has placed a spotlight on studying the perturbations in redox sig...
Mechanisms of action of thioredoxin reductase inhibitors in the context of cancer
Mechanisms of action of thioredoxin reductase inhibitors in the context of cancer
<p dir="ltr">The increased understanding of the role of redox homeostasis in cancer survival and progression has placed a spotlight on studying the perturbations in redox sig...
Comparative Analysis of Different Injection Molding Process Parameters through Injection Molding Flow Simulation for Various Gate Locations
Comparative Analysis of Different Injection Molding Process Parameters through Injection Molding Flow Simulation for Various Gate Locations
This study deals with part quality concerning gate location on the part for injection molding. Through injection molding filling simulations, basic parameters such as injection pre...
A Novel Ring-Gate AlGaN/GaN HEMT Device and Electrode Structure Optimization
A Novel Ring-Gate AlGaN/GaN HEMT Device and Electrode Structure Optimization
In this paper, a novel ring-gate structure AlGaN/GaN HEMT device is proposed and fabricated successfully. When the gate-source spacing Lgs = 5 μm, gate-drain spacing Lgd = 7 μm, ga...