Adsorption properties of advanced materials based on inp-zns system

For the first time, the adsorption properties (with regard to NO2, NH3) of solid solutions and binary components of the InP-ZnS system (within ranges of temperature 250-490 K and initial pressure 15-30 Pa) have been studied. When selecting adsorbates, their unequal electronic nature and toxicity were taken into account. The empirical dependences of adsorption αp = f(T), αT = f(Р), αT = f(t), calculated values of differential heat, differential entropy, adsorption activation energy, specific electrical conductivity «behavior» under conditions of adsorption were analyzed. As a result, the temperature conditions for the occurrence of physical and chemical activated adsorption were established. Based on the results of the infrared study, the study of the acid-base properties of the system components’ surfaces and their charging under the adsorption conditions, reasonable considerations were made about the nature of active sites represented by surface coordination-unsaturated atoms (predominantly In, Zn atoms) and about the donor-acceptor mechanism of gases adsorption with their participation as acceptors. Increased activity of the system semiconductors’ surfaces with respect to the main gases was unambiguously confirmed on the basis of direct adsorption studies. The change in the specific electrical conductivity under the adsorption conditions at room temperature was the basis for recommending the studied semiconductors for manufacture of appropriate, low-temperature sensors.