Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates
View through CrossRef
We have investigated the compositional modulation of AlGaAs layers grown in tetrahedral-shaped recesses (TSRs) on n-type GaAs (111)B substrates using scanning electron microscopy, photoluminescence and cathodoluminescence. Growth hardly occurred between the TSRs, and complicated facets were seen in the TSR. Gallium-rich regions were formed around the edges between sidewalls rather than at the center of sidewalls and at the bottom region rather than the top region. To observe the facetting process during growth, GaAs/AlGaAs multilayers were also grown in TSRs. Aluminum compositional modulation is dependent not only on the difference in migration distances of Ga and Al atoms but also on the differences in the incorporating process among different facets.
IOP Publishing
Title: Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates
Description:
We have investigated the compositional modulation of AlGaAs layers grown in tetrahedral-shaped recesses (TSRs) on n-type GaAs (111)B substrates using scanning electron microscopy, photoluminescence and cathodoluminescence.
Growth hardly occurred between the TSRs, and complicated facets were seen in the TSR.
Gallium-rich regions were formed around the edges between sidewalls rather than at the center of sidewalls and at the bottom region rather than the top region.
To observe the facetting process during growth, GaAs/AlGaAs multilayers were also grown in TSRs.
Aluminum compositional modulation is dependent not only on the difference in migration distances of Ga and Al atoms but also on the differences in the incorporating process among different facets.
Related Results
High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates
High-Temperature Metalorganic Vapor Phase Epitaxial Growth of GaAs/AlGaAs Quantum Structures in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates
GaAs/AlGaAs quantum structures were grown in tetrahedral-shaped recesses (TSRs) on GaAs {111}B substrates at temperatures above 800°C by metalorganic vapor phase epitaxy because qu...
AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine
AlGaAs/GaAs and AlGaAs/InGaAs/GaAs High Electron Mobility Transistors Grown by Metalorganic Vapor Phase Epitaxy Using Tertiarybutylarsine
We demonstrate the first fabrication of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs high electron mobility transistors (HEMTs) grown by metalorganic vapor phase epitaxy (MOVPE...
Carbon Atomic Layer Doping in AlGaAs by Metalorganic Chemical Vapor Deposition and Its Application to a P-Type Modulation Doped Structure
Carbon Atomic Layer Doping in AlGaAs by Metalorganic Chemical Vapor Deposition and Its Application to a P-Type Modulation Doped Structure
Carbon (C) atomic layer doping in AlGaAs is demonstrated. During undoped AlGaAs growth by conventional low-pressure metalorganic chemical vapor deposition, C atomic layer doping is...
Transport and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures subjected to CH4/H2 reactive ion etching
Transport and optical properties of AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostructures subjected to CH4/H2 reactive ion etching
We investigate the effect of methane/hydrogen (CH4/H2) reactive ion etching (RIE) and a subsequent annealing process on AlGaAs/GaAs and pseudomorphic AlGaAs/InGaAs/GaAs heterostruc...
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
Sublattice reversal epitaxy is demonstrated in lattice-matched
GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed
by reflection high energy elec...
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface morphologies of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy were studied using atomic force microscopy. The surface of a GaAs layer gr...
Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111)B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
Novel InGaAs/GaAs Quantum Dot Structures Formed in Tetrahedral-Shaped Recesses on (111)B GaAs Substrate Using Metalorganic Vapor Phase Epitaxy
We report a novel GaAs/InGaAs/GaAs quantum dot structure formed in a tetrahedral-shaped recess (TSR) pattered on a (111)B GaAs substrate with anisotropic chemical etching. The pseu...
Characterization of MOVPE‐grown GaN layers on GaAs (111)B with a cubic‐GaN (111) epitaxial intermediate layer
Characterization of MOVPE‐grown GaN layers on GaAs (111)B with a cubic‐GaN (111) epitaxial intermediate layer
AbstractWe have proposed the use of cubic‐GaN (c‐GaN) as an intermediate layer for the metalorganic vapor phase epitaxy (MOVPE) growth of hexagonal‐GaN (h‐GaN) on GaAs (111)B subst...