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Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates
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We have investigated the compositional modulation of AlGaAs layers grown in tetrahedral-shaped recesses (TSRs) on n-type GaAs (111)B substrates using scanning electron microscopy, photoluminescence and cathodoluminescence. Growth hardly occurred between the TSRs, and complicated facets were seen in the TSR. Gallium-rich regions were formed around the edges between sidewalls rather than at the center of sidewalls and at the bottom region rather than the top region. To observe the facetting process during growth, GaAs/AlGaAs multilayers were also grown in TSRs. Aluminum compositional modulation is dependent not only on the difference in migration distances of Ga and Al atoms but also on the differences in the incorporating process among different facets.
IOP Publishing
Title: Metalorganic Vapor Phase Eitaxy Growth Features of AlGaAs in Tetrahedral-Shaped Recesses on GaAs (111)B Substrates
Description:
We have investigated the compositional modulation of AlGaAs layers grown in tetrahedral-shaped recesses (TSRs) on n-type GaAs (111)B substrates using scanning electron microscopy, photoluminescence and cathodoluminescence.
Growth hardly occurred between the TSRs, and complicated facets were seen in the TSR.
Gallium-rich regions were formed around the edges between sidewalls rather than at the center of sidewalls and at the bottom region rather than the top region.
To observe the facetting process during growth, GaAs/AlGaAs multilayers were also grown in TSRs.
Aluminum compositional modulation is dependent not only on the difference in migration distances of Ga and Al atoms but also on the differences in the incorporating process among different facets.
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