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GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
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Sublattice reversal epitaxy is demonstrated in lattice-matched
GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed
by reflection high energy electron diffraction and preferential etching.
In the GaAs/Ge/GaAs (100) system, the sublattice reversal is
assisted by self-annihilation of the antiphase domains generated at the
GaAs/Ge interface. In the GaAs/Ge/GaAs (111) system, the sublattice reversal
results from the unique structure of the As-terminated Ge (111) surfaces.
The quality of the sublattice-reversed GaAs crystal is investigated
using cross-sectional transmission electron microscopy. A method to
fabricate a periodically domain-inverted structure using sublattice reversal
epitaxy is demonstrated for the GaAs/Ge/GaAs (100) system.
Title: GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
Description:
Sublattice reversal epitaxy is demonstrated in lattice-matched
GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed
by reflection high energy electron diffraction and preferential etching.
In the GaAs/Ge/GaAs (100) system, the sublattice reversal is
assisted by self-annihilation of the antiphase domains generated at the
GaAs/Ge interface.
In the GaAs/Ge/GaAs (111) system, the sublattice reversal
results from the unique structure of the As-terminated Ge (111) surfaces.
The quality of the sublattice-reversed GaAs crystal is investigated
using cross-sectional transmission electron microscopy.
A method to
fabricate a periodically domain-inverted structure using sublattice reversal
epitaxy is demonstrated for the GaAs/Ge/GaAs (100) system.
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