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DC and RF Performance of 50 nm Gate Pseudomorphic In0.7Ga0.3As/In0.52Al0.48As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
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In this paper, we report on the material and device characteristics of pseudomorphic In0.7Ga0.3As/In0.52Al0.48As high electron mobility transistors (HEMTs) grown on a (411)A-oriented InP substrate by molecular-beam epitaxy. The electron Hall mobility in the (411)A HEMT was 2.5 times higher at 15 K and 1.3 times higher even at room temperature than that in a HEMT grown on a conventional (100) InP substrate. The (411)A HEMTs with 50 nm gates provided excellent DC and RF device characteristics.The maximum transconductance was as high as 1.1 S/mm, and the cutoff frequency reached 355 GHz.
IOP Publishing
Masataka Higashiwaki Masataka Higashiwaki
Takahiro Kitada Takahiro Kitada
Toyohiro Aoki Toyohiro Aoki
Satoshi Shimomura Satoshi Shimomura
Yoshimi Yamashita Yoshimi Yamashita
Akira Endoh Akira Endoh
Kohki Hikosaka Kohki Hikosaka
Takashi Mimura Takashi Mimura
Toshiaki Matsui Toshiaki Matsui
Satoshi Hiyamizu Satoshi Hiyamizu
Title: DC and RF Performance of 50 nm Gate Pseudomorphic In0.7Ga0.3As/In0.52Al0.48As High Electron Mobility Transistors Grown on (411)A-Oriented InP Substrates by Molecular-Beam Epitaxy
Description:
In this paper, we report on the material and device characteristics of pseudomorphic In0.
7Ga0.
3As/In0.
52Al0.
48As high electron mobility transistors (HEMTs) grown on a (411)A-oriented InP substrate by molecular-beam epitaxy.
The electron Hall mobility in the (411)A HEMT was 2.
5 times higher at 15 K and 1.
3 times higher even at room temperature than that in a HEMT grown on a conventional (100) InP substrate.
The (411)A HEMTs with 50 nm gates provided excellent DC and RF device characteristics.
The maximum transconductance was as high as 1.
1 S/mm, and the cutoff frequency reached 355 GHz.
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