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Al/GaAs Schottky Diode Implanted by Focused Ion Beam
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We investigated electrical characteristics of Al/p-type GaAs Schottky diodes with carrier concentrations of 1×1017 to 3×1018 cm-3, which were produced by focused-ion-beam (FIB) implantation and by defocused-ion-beam implantation. It was confirmed experimentally that the ideality factors and the Schottky barrier heights depended on the effects of thermionic field emission. Furthermore, the possibility of the FIB implantation process for fabrication of the Schottky diode with the high carrier concentration region was recognized.
Title: Al/GaAs Schottky Diode Implanted by Focused Ion Beam
Description:
We investigated electrical characteristics of Al/p-type GaAs Schottky diodes with carrier concentrations of 1×1017 to 3×1018 cm-3, which were produced by focused-ion-beam (FIB) implantation and by defocused-ion-beam implantation.
It was confirmed experimentally that the ideality factors and the Schottky barrier heights depended on the effects of thermionic field emission.
Furthermore, the possibility of the FIB implantation process for fabrication of the Schottky diode with the high carrier concentration region was recognized.
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