Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Characteristics of Metal/P+-Gaas Schottky Barrier Junction Formed by Focused-Ion-Beam Implantation
View through CrossRef
ABSTRACTBeryllium (Be) depth profiles, carrier profiles, ideality factors (deviation from thermionic emission and diffusion theory) and Schottky barrier heights of Al/p+-GaAs Schottky diodes were investigated by using focused ion beam (FIB) and de-focused ion beam (DFIB) of 40keV Be+, with dose range from 5.0×1012ions/cm2 to 3.4×1014ions/cm2. Differences of the depth profiles between FIB implantation and DFIB implantation were observed, and it was confirmed that depth profiles of the ion implantations were affected by current densities of the ion probes. The other side, it was recognized that the ideality factors and the Schottky barrier heights of the Schottky diodes were depended on effect of thermionic field emission.
Title: Characteristics of Metal/P+-Gaas Schottky Barrier Junction Formed by Focused-Ion-Beam Implantation
Description:
ABSTRACTBeryllium (Be) depth profiles, carrier profiles, ideality factors (deviation from thermionic emission and diffusion theory) and Schottky barrier heights of Al/p+-GaAs Schottky diodes were investigated by using focused ion beam (FIB) and de-focused ion beam (DFIB) of 40keV Be+, with dose range from 5.
0×1012ions/cm2 to 3.
4×1014ions/cm2.
Differences of the depth profiles between FIB implantation and DFIB implantation were observed, and it was confirmed that depth profiles of the ion implantations were affected by current densities of the ion probes.
The other side, it was recognized that the ideality factors and the Schottky barrier heights of the Schottky diodes were depended on effect of thermionic field emission.
Related Results
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface Corrugation of GaAs Layers Grown on (775)B-Oriented GaAs Substrates by Molecular Beam Epitaxy
Surface morphologies of GaAs layers grown on (775)B-oriented GaAs substrates by molecular beam epitaxy were studied using atomic force microscopy. The surface of a GaAs layer gr...
Tungsten silicide Schottky contacts on GaAs
Tungsten silicide Schottky contacts on GaAs
Two types of I–V characteristics for W–Si/GaAs Schottky contacts have been observed. With sputtering deposition from a W–Si composite target (type A), The Schottky contacts have a ...
Al/GaAs Schottky Diode Implanted by Focused Ion Beam
Al/GaAs Schottky Diode Implanted by Focused Ion Beam
We investigated electrical characteristics of Al/p-type GaAs Schottky diodes with carrier concentrations of 1×1017 to 3×1018 cm-3, which were produced by focused-ion-beam (FIB) imp...
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
GaAs/Ge/GaAs Sublattice Reversal Epitaxy on GaAs (100) and (111) Substrates for Nonlinear Optical Devices
Sublattice reversal epitaxy is demonstrated in lattice-matched
GaAs/Ge/GaAs (100) and (111) systems using molecular beam epitaxy, and confirmed
by reflection high energy elec...
MOC1 cleaves Holliday junctions through a cooperative nick and counter-nick mechanism mediated by metal ions
MOC1 cleaves Holliday junctions through a cooperative nick and counter-nick mechanism mediated by metal ions
AbstractHolliday junction resolution is a crucial process in homologous recombination and DNA double-strand break repair. Complete Holliday junction resolution requires two stepwis...
Analysis of the relation between spectral response and absorptivity of GaAs photocathode
Analysis of the relation between spectral response and absorptivity of GaAs photocathode
In order to study the relation between spectral response and absorptivity of GaAs photocathode, two kinds of GaAs photocathodes are prepared by molecular beam epitaxy (MBE) and met...
Thrust density characteristics of ion thruster
Thrust density characteristics of ion thruster
Thrust density distribution of ion thruster is an important factor that affects the orbit correction and station keeping of the spacecraft. Current empirical models mainly concern ...
Effects of Ion Implantation on Protein Adsorption onto Silicone Rubber
Effects of Ion Implantation on Protein Adsorption onto Silicone Rubber
AbstractA study has been made on the surface wettability, atomic ratio, chemical structure, chemical bonding states and plasma protein adsorption of ion implanted silicone rubbers....