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Modulation spectroscopy of the Group III nitrides
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Abstract
Modulation spectroscopy is a powerful and versatile optical technique for obtaining valuable information about a large variety of semiconductor systems [1-9], including bulk/thin films, micro- and nanostructures (quantum wells, multiple quantum wells, superlattices, quantum wires, quantum dots), surfaces/ interfaces (semiconductor/ air (vacuum), semiconductor/semiconductor (hetero- and homojunctions), semiconductor/metal, semiconductor/ electrolyte), and the effects of growth/processing, as well as the characterization of actual device structures (heterojunction bipolar transistors, pseudomorphic high electron mobility transistor, quantum well lasers).
Title: Modulation spectroscopy of the Group III nitrides
Description:
Abstract
Modulation spectroscopy is a powerful and versatile optical technique for obtaining valuable information about a large variety of semiconductor systems [1-9], including bulk/thin films, micro- and nanostructures (quantum wells, multiple quantum wells, superlattices, quantum wires, quantum dots), surfaces/ interfaces (semiconductor/ air (vacuum), semiconductor/semiconductor (hetero- and homojunctions), semiconductor/metal, semiconductor/ electrolyte), and the effects of growth/processing, as well as the characterization of actual device structures (heterojunction bipolar transistors, pseudomorphic high electron mobility transistor, quantum well lasers).
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