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Epitaxial Growth of Si1-yCy Film by Low Temperature Chemical Vapor Deposition
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Epitaxial Si1-y
Cy films were grown on Si(100) by two methods, mercury sensitized photochemical vapor deposition and plasma-enhanced chemical vapor deposition, at substrate temperatures of around 200°C using SiH4, H2 and C2H2. The vibration mode at 607 cm-1, which indicated the presence of the C atoms located at the Si substitutional sites, was observed in both Fourier transform infrared absorption and Raman scattering spectroscopy of the samples annealed at 600 to 700°C. The C composition was controlled by varying the C2H2/SiH4 ratio. The maximum substitutional C compositions of 2.3 at% and 2.7 at% were successfully obtained by mercury sensitized photochemical vapor deposition and plasma-enhanced chemical vapor deposition, respectively.
Title: Epitaxial Growth of Si1-yCy Film by Low Temperature Chemical Vapor Deposition
Description:
Epitaxial Si1-y
Cy films were grown on Si(100) by two methods, mercury sensitized photochemical vapor deposition and plasma-enhanced chemical vapor deposition, at substrate temperatures of around 200°C using SiH4, H2 and C2H2.
The vibration mode at 607 cm-1, which indicated the presence of the C atoms located at the Si substitutional sites, was observed in both Fourier transform infrared absorption and Raman scattering spectroscopy of the samples annealed at 600 to 700°C.
The C composition was controlled by varying the C2H2/SiH4 ratio.
The maximum substitutional C compositions of 2.
3 at% and 2.
7 at% were successfully obtained by mercury sensitized photochemical vapor deposition and plasma-enhanced chemical vapor deposition, respectively.
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