Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Photoluminescence of Selectively Grown Epitaxial SiGe:C/Si layers
View through CrossRef
Photoluminescence of strained Si1-x-yGexCy alloy layer and Si1-x-yGexCy /Si1-xGex structures selectively grown by RT-CVD is investigated. Spectroscopic PL at low temperature (14K) and integrated PL at room temperature were performed. We report the effect of C atoms on SiGe photoluminescence spectra features, especially intensity ratio between the no-phonon (NP) and transverse-optical (TO) transitions. Using dedicated Si1-x-yGexCy /Si1-xGex structures, influence on SiGe PL spectra of C atoms supposed in non-substitutional positions is reported.
The Electrochemical Society
Title: Photoluminescence of Selectively Grown Epitaxial SiGe:C/Si layers
Description:
Photoluminescence of strained Si1-x-yGexCy alloy layer and Si1-x-yGexCy /Si1-xGex structures selectively grown by RT-CVD is investigated.
Spectroscopic PL at low temperature (14K) and integrated PL at room temperature were performed.
We report the effect of C atoms on SiGe photoluminescence spectra features, especially intensity ratio between the no-phonon (NP) and transverse-optical (TO) transitions.
Using dedicated Si1-x-yGexCy /Si1-xGex structures, influence on SiGe PL spectra of C atoms supposed in non-substitutional positions is reported.
Related Results
A Benchmark of Germane and Digermane for the Low Temperature Growth of Intrinsic and Heavily in-situ Boron-Doped SiGe
A Benchmark of Germane and Digermane for the Low Temperature Growth of Intrinsic and Heavily in-situ Boron-Doped SiGe
We have recently demonstrated the interest of using Si2H6 + GeH4 for the 450°C-500°C epitaxy of (i) intrinsic SiGe layers and (ii) SiGe:B raised sources and drains [1-4]. One way o...
Relationship among total tear IgE, specific serum IgE, and total serum IgE levels in patients with pollen-induced allergic conjunctivitis
Relationship among total tear IgE, specific serum IgE, and total serum IgE levels in patients with pollen-induced allergic conjunctivitis
Abstract
Background
Recently, the number of patients with pollinosis, particularly Japanese cedar pollinosis, has markedly increased. We previously ...
Germanium/Silicon-Germanium Heterostructure Avalanche Photodiodes on Silicon
Germanium/Silicon-Germanium Heterostructure Avalanche Photodiodes on Silicon
Near-infrared photodiodes (PDs) of Ge on Si have been widely studied in Si photonics for the optical communications (1.3–1.6 μm). Ge-based avalanche PDs (APDs) have been also studi...
Anisotropic selective etching between SiGe and Si
Anisotropic selective etching between SiGe and Si
Abstract
In Si/SiGe dual-channel FinFETs, it is necessary to simultaneously control the etched amounts of SiGe and Si. However, the SiGe etch rate is higher than ...
Analysis of Si/SiGe/Si double heterojunction band of a novelstructure of PIN electronic modulation
Analysis of Si/SiGe/Si double heterojunction band of a novelstructure of PIN electronic modulation
PIN is a common structure of electrical modulation in electro-optic modulator, and the performance of the electro-optic modulator is directly affected by the carrier injection in P...
Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
Band-Edge Photoluminescence of SiGe/Strained-Si/SiGe Type-II Quantum Wells on Si(100)
High-quality completely lattice-relaxed SiGe buffer layer has been grown on Si(100) by using gas source molecular beam epitaxy. Pseudomorphic Si layer has been grown on this lattic...
A Benchmark of Germane and Digermane for the Low Temperature Growth of Intrinsic and Heavily in-situ Boron-Doped SiGe
A Benchmark of Germane and Digermane for the Low Temperature Growth of Intrinsic and Heavily in-situ Boron-Doped SiGe
We have benchmarked germane and digermane for the low temperature growth of SiGe and SiGe:B (with disilane as the Si gaseous precursor). At 500°C, 20 Torr, the SiGe growth rate inc...
Nanoscale quantitative characterization of
22nm CMOS
transistor using Scanning Transmission Electron Microscopy (
STEM
)
Nanoscale quantitative characterization of
22nm CMOS
transistor using Scanning Transmission Electron Microscopy (
STEM
)
22nm Silicon‐On‐Insulator (SOI) complementary metal‐oxide semiconductor (CMOS) technology has a number of performance boosters, such as third generation embedded DRAM, embedded str...