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Room-temperature ferroelectricity of SrTiO3 films modulated by cation concentration
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The room-temperature ferroelectricity of SrTiO3 is promising for oxide electronic devices controlled by multiple fields. An effective way to control the ferroelectricity is highly demanded. Here, we show that the off-centered antisite-like defects in SrTiO3 films epitaxially grown on Si (001) play the determinative role in the emergence of room-temperature ferroelectricity. The density of these defects changes with the film cation concentration sensitively, resulting in a varied coercive field of the ferroelectric behavior. Consequently, the room-temperature ferroelectricity of SrTiO3 films can be effectively modulated by tuning the temperature of metal sources during the molecular beam epitaxy growth. Such an easy and reliable modulation of the ferroelectricity enables the flexible engineering of multifunctional oxide electronic devices.
Title: Room-temperature ferroelectricity of SrTiO3 films modulated by cation concentration
Description:
The room-temperature ferroelectricity of SrTiO3 is promising for oxide electronic devices controlled by multiple fields.
An effective way to control the ferroelectricity is highly demanded.
Here, we show that the off-centered antisite-like defects in SrTiO3 films epitaxially grown on Si (001) play the determinative role in the emergence of room-temperature ferroelectricity.
The density of these defects changes with the film cation concentration sensitively, resulting in a varied coercive field of the ferroelectric behavior.
Consequently, the room-temperature ferroelectricity of SrTiO3 films can be effectively modulated by tuning the temperature of metal sources during the molecular beam epitaxy growth.
Such an easy and reliable modulation of the ferroelectricity enables the flexible engineering of multifunctional oxide electronic devices.
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