Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
Radical Fluxes in Electron Cyclotron Resonance Plasma Chemical Vapor Deposition of Amorphous Silicon
View through CrossRef
The precursors of a-Si:H films in electron cyclotron resonance plasma chemical vapor deposition have been investigated by analyzing the deposition profile on a trench. The profile of the film prepared from radicals produced in the gas phase by electron collision with SiH4is simulated by a Monte Carlo method using a sticking probability of 0.8 for Si, SiH and SiH2radicals and of 0.1 for SiH3radicals. A comparison between the experimental result and the simulation has shown that the ratio of the total flux of SiHx(x=0-2) to the flux of SiH3in the radicals reaching the surface is 0.82 at 3 mTorr. The flux of radicals which maintain the momentum of SiH4emitted from a nozzle is also compared with that of radicals with a random direction of momentum.
Title: Radical Fluxes in Electron Cyclotron Resonance Plasma Chemical Vapor Deposition of Amorphous Silicon
Description:
The precursors of a-Si:H films in electron cyclotron resonance plasma chemical vapor deposition have been investigated by analyzing the deposition profile on a trench.
The profile of the film prepared from radicals produced in the gas phase by electron collision with SiH4is simulated by a Monte Carlo method using a sticking probability of 0.
8 for Si, SiH and SiH2radicals and of 0.
1 for SiH3radicals.
A comparison between the experimental result and the simulation has shown that the ratio of the total flux of SiHx(x=0-2) to the flux of SiH3in the radicals reaching the surface is 0.
82 at 3 mTorr.
The flux of radicals which maintain the momentum of SiH4emitted from a nozzle is also compared with that of radicals with a random direction of momentum.
Related Results
A Study on the Relation between Film Quality and Deposition Rate for Amorphous Silicon Films Grown by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Using H 2/SiH 4
A Study on the Relation between Film Quality and Deposition Rate for Amorphous Silicon Films Grown by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition Using H 2/SiH 4
The relation between film quality and deposition rate of hydrogenated amorphous silicon films deposited by electron cyclotron resonance plasma chemical vapor deposition using ...
Magnetohydrodynamics enhanced radio blackout mitigation system for spacecraft during planetary entries
Magnetohydrodynamics enhanced radio blackout mitigation system for spacecraft during planetary entries
(English) Spacecraft entering planetary atmospheres are enveloped by a plasma layer with high levels of ionization, caused by the extreme temperatures in the shock layer. The charg...
Microwave electron cyclotron resonance plasma for chemical vapor deposition and etching
Microwave electron cyclotron resonance plasma for chemical vapor deposition and etching
A highly activated microwave plasma is easily obtained based on the electron cyclotron resonance at relatively low gas pressures in the range from 10−3 to 10−1 Pa. The influence of...
What Is the Impact of Turfgrass on Urban Carbon Dioxide Fluxes?
What Is the Impact of Turfgrass on Urban Carbon Dioxide Fluxes?
Evaluating the efficacy of climate mitigation measures requires quantifying urban greenhouse gas (GHG) emissions. Both anthropogenic and biogenic GHG fluxes are important in urban ...
EFEKTIFITAS JENIS DESIKAN DAN KECEPATAN UDARA TERHADAP PENYERAPAN UAP AIR DI UDARA
EFEKTIFITAS JENIS DESIKAN DAN KECEPATAN UDARA TERHADAP PENYERAPAN UAP AIR DI UDARA
Dry air is widely used in many fields, but the excessive water vapor in the air will make some problem and should be minimized to get the required dry air. The purpose of th...
High Transmittance SiC Membrane Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition in Combination with Rapid Thermal Annealing
High Transmittance SiC Membrane Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition in Combination with Rapid Thermal Annealing
A thin film of SiC was deposited by electron cyclotron resonance plasma chemical vapor deposition (ECR plasma CVD) method for an X-ray mask membrane, and its physical and chemical ...
Optical Characteristics of Amorphous Silicon Nitride Thin Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
Optical Characteristics of Amorphous Silicon Nitride Thin Films Prepared by Electron Cyclotron Resonance Plasma Chemical Vapor Deposition
Amorphous silicon nitride thin films were prepared by electron cyclotron resonance (ECR) plasma chemical vapor deposition (CVD) at low substrate temperatures of 65–400°C, and thei...
The Structure and Crystallization Process of Amorphous Iron Nanoparticles
The Structure and Crystallization Process of Amorphous Iron Nanoparticles
This paper studies the crystallization process and structure of amorphous iron nanoparticles by molecular dynamics method. The study shows that amorphous iron nanoparticles could n...