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Microwave electron cyclotron resonance plasma for chemical vapor deposition and etching
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A highly activated microwave plasma is easily obtained based on the electron cyclotron resonance at relatively low gas pressures in the range from 10−3 to 10−1 Pa. The influence of the microwave power and gas pressures on the plasma parameters has been studied. Si3N4 film has been deposited on the silicon substrate utilizing the microwave electron cyclotron resonance (ECR) plasma without substrate heating. The film is examined by FT-IR, ellipsometry, and Auger electron spectroscopy. Hydrogen is not detected in the film. Reactive plasma etching is successful in the microwave ECR plasma. The dependence of the etch rate on the ratio of O2/CF4 in the gas and the bias voltage on the specimen has been investigated.
Title: Microwave electron cyclotron resonance plasma for chemical vapor deposition and etching
Description:
A highly activated microwave plasma is easily obtained based on the electron cyclotron resonance at relatively low gas pressures in the range from 10−3 to 10−1 Pa.
The influence of the microwave power and gas pressures on the plasma parameters has been studied.
Si3N4 film has been deposited on the silicon substrate utilizing the microwave electron cyclotron resonance (ECR) plasma without substrate heating.
The film is examined by FT-IR, ellipsometry, and Auger electron spectroscopy.
Hydrogen is not detected in the film.
Reactive plasma etching is successful in the microwave ECR plasma.
The dependence of the etch rate on the ratio of O2/CF4 in the gas and the bias voltage on the specimen has been investigated.
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