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Characterization of Cleaved GaAs Tips for Scanning Tunneling Microscopy
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We have studied tunneling spectroscopy using cleaved n-type GaAs tips in a scanning tunneling microscope (STM) to characterize the electronic properties of the cleaved tips. The tunneling spectra were measured for a set of GaAs tips and metal surfaces and GaAs flat surfaces and metal tips. The spectra obtained for a GaAs tip and a metal surface are symmetrical for a bias voltage with narrower energy gaps, which are different from those with a GaAs flat surface and a metal tip. This result indicates a stronger pinning of the surface Fermi level at midgap in the cleaved GaAs tips than that in the GaAs flat surface. This characteristic is also confirmed by photoresponse measurements in the STM.
Title: Characterization of Cleaved GaAs Tips for Scanning Tunneling Microscopy
Description:
We have studied tunneling spectroscopy using cleaved n-type GaAs tips in a scanning tunneling microscope (STM) to characterize the electronic properties of the cleaved tips.
The tunneling spectra were measured for a set of GaAs tips and metal surfaces and GaAs flat surfaces and metal tips.
The spectra obtained for a GaAs tip and a metal surface are symmetrical for a bias voltage with narrower energy gaps, which are different from those with a GaAs flat surface and a metal tip.
This result indicates a stronger pinning of the surface Fermi level at midgap in the cleaved GaAs tips than that in the GaAs flat surface.
This characteristic is also confirmed by photoresponse measurements in the STM.
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