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AlGaAs/InGaAs/GaAs pHEMT-structures with AlAs donor nanoinsertion.
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In the present paper we study a method to improve planar uniformity of AlGaAs/InGaAs/GaAs pHEMT-structures sheet resistance by means of introducing of 5 nm thick AlAs donor insertion into the barrier layer. The structures are grown by MOCVD at 76.2 mm GaAs(001) semi-isolating wafer. It has been found out that such structures stably have sheet resistance square root deviation lower than 1%. All the structures have passed technical control by the haze. The atomic-force microscopy studies show nearly ideal morphology of the structures surfaces.
Kotelnikov Institute of Radioengineering and Electronics of Russian Academy of Sciences
Title: AlGaAs/InGaAs/GaAs pHEMT-structures with AlAs donor nanoinsertion.
Description:
In the present paper we study a method to improve planar uniformity of AlGaAs/InGaAs/GaAs pHEMT-structures sheet resistance by means of introducing of 5 nm thick AlAs donor insertion into the barrier layer.
The structures are grown by MOCVD at 76.
2 mm GaAs(001) semi-isolating wafer.
It has been found out that such structures stably have sheet resistance square root deviation lower than 1%.
All the structures have passed technical control by the haze.
The atomic-force microscopy studies show nearly ideal morphology of the structures surfaces.
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