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Atomic Sites of S on (NH4)2Sx-Treated GaAs(100) Surface
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Locations of S atoms on (NH4)2S
x
-treated GaAs(100) surfaces annealed at
200°C and 400°C have been studied on atomic scale by X-ray
photoemission spectroscopy (XPS), scanning tunneling microscopy (STM) and medium-energy
ion scattering (MEIS) using blocking. XPS spectra showed that the growth of native oxide
layers on GaAs surfaces was suppressed after (NH4)2S
x
treatment
and that most S atoms were bonded to only As or Ga atoms depending on the annealing temperature.
STM observations revealed that S atoms on a GaAs(100) surface were reconstructed in a
periodic structure of 1×1 in the case of annealing at 200°C,
while 2×1 reconstruction was observed after annealing at 400°C.
The distance between the S adsorbed layer and the uppermost layer of GaAs(100) could
be estimated from the angle-resolved MEIS blocking spectra.
Title: Atomic Sites of S on (NH4)2Sx-Treated GaAs(100) Surface
Description:
Locations of S atoms on (NH4)2S
x
-treated GaAs(100) surfaces annealed at
200°C and 400°C have been studied on atomic scale by X-ray
photoemission spectroscopy (XPS), scanning tunneling microscopy (STM) and medium-energy
ion scattering (MEIS) using blocking.
XPS spectra showed that the growth of native oxide
layers on GaAs surfaces was suppressed after (NH4)2S
x
treatment
and that most S atoms were bonded to only As or Ga atoms depending on the annealing temperature.
STM observations revealed that S atoms on a GaAs(100) surface were reconstructed in a
periodic structure of 1×1 in the case of annealing at 200°C,
while 2×1 reconstruction was observed after annealing at 400°C.
The distance between the S adsorbed layer and the uppermost layer of GaAs(100) could
be estimated from the angle-resolved MEIS blocking spectra.
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