Mathematical analysis of spin transport in topological insulators to optimize memory devices performance using numerical simulations

Understanding spin transport in topological insulators (TIs) is crucial for the development of spin-based technologies, such as magnetic memory, sensors, and quantum bits. To optimize memory device performance, we developed a comprehensive mathematical model that describes the evolution of spin density, as a function of space and time, taking into account spin-momentum locking, spin-orbit coupling, spin dynamics, and diffusive transport processes (including phonon and impurity scattering). Using numerical simulations (finite element method and Backward Euler Method) implemented in Python, we analyzed the spin transport in TIs. Our study demonstrated a critical dependence of spin transport efficiency on device length, with a maximum efficiency of 75% at a length of 8 micrometers. Beyond a critical length of 10 micrometers, efficiency recovered, reaching 80% at 14 micrometers. We observed oscillatory behavior in spin polarization, with amplitude modulation indicating constructive and destructive interference patterns. The inclusion of spin-orbit coupling and Dirac terms in our model revealed a non-uniform spin polarization distribution, with a 30% increase in polarization near the center. Defects and boundaries significantly impacted spin transport, reducing polarization by 40% near the defect region. Through optimization, we achieved a 25% increase in spin transport efficiency and a 20% enhancement in memory device performance. Our results demonstrate the crucial role of optimizing device length, material quality, and interface engineering in achieving efficient spin transport and improved memory device performance, paving the way for the development of high-performance spin-based technologies.