Search engine for discovering works of Art, research articles, and books related to Art and Culture
Javascript must be enabled to continue!
SiC‐based analytical model for gate‐stack dual metal nanowireFETwith enhanced analog performance
View through CrossRef
AbstractIn this paper, silicon carbide‐based analytical model for gate‐stack dual metal nanowire field effect transistor (gate‐stack DM NW FET) has been analyzed by solving the 2D Poisson's equation using parabolic approximation method for electric potential, subthreshold current and subthreshold slope. The results have been examined for various silicon carbide film depth and channel length. The results predicted by the analytical model have excellent agreement with simulated results obtained by ATLAS 3D device simulator. A gate‐stack having high k‐dielectric material, that is, Hafnium oxide (HfO2) along with aluminum oxide (Al2O3) has been used. Also, performance characteristics of gate‐stack DM NW FET have been compared with the performance characteristics of nanowire field effect transistor (NW FET), Nanowire field effect transistor (NW FET) (Sic) and dual metal nanowire field effect transistor (DM NW FET) (SiC). It is so proved that our proposed device, that is, gate‐stack DM NW FET (4H‐SiC) exhibits superior performance in terms of drain current (Ids), transconductance (gm), output conductance (gd) and cut off frequency (fT) than the existing devices.
Title: SiC‐based analytical model for gate‐stack dual metal nanowireFETwith enhanced analog performance
Description:
AbstractIn this paper, silicon carbide‐based analytical model for gate‐stack dual metal nanowire field effect transistor (gate‐stack DM NW FET) has been analyzed by solving the 2D Poisson's equation using parabolic approximation method for electric potential, subthreshold current and subthreshold slope.
The results have been examined for various silicon carbide film depth and channel length.
The results predicted by the analytical model have excellent agreement with simulated results obtained by ATLAS 3D device simulator.
A gate‐stack having high k‐dielectric material, that is, Hafnium oxide (HfO2) along with aluminum oxide (Al2O3) has been used.
Also, performance characteristics of gate‐stack DM NW FET have been compared with the performance characteristics of nanowire field effect transistor (NW FET), Nanowire field effect transistor (NW FET) (Sic) and dual metal nanowire field effect transistor (DM NW FET) (SiC).
It is so proved that our proposed device, that is, gate‐stack DM NW FET (4H‐SiC) exhibits superior performance in terms of drain current (Ids), transconductance (gm), output conductance (gd) and cut off frequency (fT) than the existing devices.
Related Results
Thermal Effects in High Compactness CEA Stack
Thermal Effects in High Compactness CEA Stack
Thermal management is a pivotal aspect of stack durability and system operability. Consequently, understanding the thermal mapping within a stack based on its operating conditions ...
Notched Gate and Graded Gate Oxide Processing for Reduced Capacitance Application in RF MOSFETs
Notched Gate and Graded Gate Oxide Processing for Reduced Capacitance Application in RF MOSFETs
As the demands of RF applications are rising, optimization of internal MOSFETs capacitances is a key issue to improve the cut-off frequency. In this abstract we report the developm...
Temperature sensitive analytical analysis of gate‐stack dual metal nanowire field‐effect transistor (4H‐SiC)
Temperature sensitive analytical analysis of gate‐stack dual metal nanowire field‐effect transistor (4H‐SiC)
AbstractThis article presents an analytical study and effect of temperature (T = 100, 200, 300, 400 K) on various parameters of gate‐stack dual metal nanowire field‐effect transist...
Adjustments of the Rock-Eval® thermal analysis for Soil Organic and Inorganic Carbon (SOC and SIC) quantifications
Adjustments of the Rock-Eval® thermal analysis for Soil Organic and Inorganic Carbon (SOC and SIC) quantifications
Quantifying Soil Organic and Inorganic Carbon (SOC & SIC) separately in carbonate soils involves successive pretreatments and/or measurements to separate the two carbon forms. ...
(Invited) PEM Water Electrolysis Stack Development and Related Characterization Tools
(Invited) PEM Water Electrolysis Stack Development and Related Characterization Tools
For decades, proton-exchange membrane (PEM) water electrolysis (WE) has been mainly used for oxygen generation in anaerobic environments. Over the past two decades, however, it has...
Effect of different kinds of SiC fibers on microwave absorption and mechanical properties of SiCf/SiC composites
Effect of different kinds of SiC fibers on microwave absorption and mechanical properties of SiCf/SiC composites
Abstract
The SiC fibers are essential for designing microwave absorption and mechanical properties of multifunctional composites. In this study, SLF, KD-II and KD-S SiC fib...
Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors
Investigation of the Gate Degradation Induced by Forward Gate Voltage Stress in p-GaN Gate High Electron Mobility Transistors
In this work, we investigated the degradation of the p-GaN gate stack induced by the forward gate voltage stress in normally off AlGaN/GaN high electron mobility transistors (HEMTs...
(Invited) 4H-SiC Ion Implanted Bipolar Junctions: Relevance of the 1950°C Temperature for Post Implantation Annealing
(Invited) 4H-SiC Ion Implanted Bipolar Junctions: Relevance of the 1950°C Temperature for Post Implantation Annealing
Ion implantation is a relevant technology for the fabrication of p-n interfaces in several SiC electronic devices; ion implanted source/drain and body regions in commercial 4H-SiC ...