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High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes
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As an Al-free material system, the GaInAs/GaInP heterostructure has a large conduction-band discontinuity. We report the fabrication of GaInAs/GaInP resonant tunneling diodes which exhibit current density-voltage characteristics with a peak-to-valley current ratio of 7.8 at 4.2 K. To our knowledge, this is the highest value obtained for this material system.
Title: High Peak-to-Valley Current Ratio GaInAs/GaInP Resonant Tunneling Diodes
Description:
As an Al-free material system, the GaInAs/GaInP heterostructure has a large conduction-band discontinuity.
We report the fabrication of GaInAs/GaInP resonant tunneling diodes which exhibit current density-voltage characteristics with a peak-to-valley current ratio of 7.
8 at 4.
2 K.
To our knowledge, this is the highest value obtained for this material system.
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