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35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate
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P-type metal oxide semiconductor
field-effect transistors with PtSi Schottky sources/drains
with a 35-nm long metal gate
were fabricated on a separation by implanted oxygen substrate by
electron-beam lithography and a self-aligned silicide process.
The drain current was -176 µA/µm and
the transconductance was 390 mS/mm
at V
DS = V
GS = -1.5 V.
For these devices, comparable drivability
to conventional metal oxide semiconductor
field-effect transistors was achieved.
The on/off ratio was improved using a very thin
silicon-on-insulator structure.
Title: 35 nm Metal Gate p-type Metal Oxide Semiconductor Field-Effect Transistor with PtSi Schottky Source/Drain on Separation by Implanted Oxygen Substrate
Description:
P-type metal oxide semiconductor
field-effect transistors with PtSi Schottky sources/drains
with a 35-nm long metal gate
were fabricated on a separation by implanted oxygen substrate by
electron-beam lithography and a self-aligned silicide process.
The drain current was -176 µA/µm and
the transconductance was 390 mS/mm
at V
DS = V
GS = -1.
5 V.
For these devices, comparable drivability
to conventional metal oxide semiconductor
field-effect transistors was achieved.
The on/off ratio was improved using a very thin
silicon-on-insulator structure.
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