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Reduction of Point Defects and Formation of Abrupt Hetero-Interfaces in Low-Temperature Molecular Beam Epitaxy of GaAs and GaP under Atomic Hydrogen Irradiation
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The removal effect of excess As and P atoms adsorbed on GaAs (100) and GaP
(100) surfaces by atomic hydrogen (H) irradiation was investigated by
reflection high-energy electron diffraction and X-ray photoelectron
spectroscopy.
It was found that the excess As and P atoms were effectively removed
by atomic H irradiation at a low temperature of 350°C.
Then, we attempted to obtain a high-quality GaAs epitaxial layer
and an ordered (GaAs)1(GaP)3 strained short-period superlattice (SSPS)
with abrupt GaAs/GaP hetero-interfaces in the low-temperature growth
under atomic H irradiation. The quality of the GaAs epitaxial layer
and the abruptness of the GaAs/GaP hetero-interfaces in the (GaAs)1(GaP)3
SSPS were evaluated by photoluminescence, deep-level transient spectroscopy
and transmission electron microscopy. As a result, it was clarified
that the density of point defects in the GaAs epitaxial layer was reduced
and an abrupt GaAs/GaP hetero-interface of the (GaAs)1(GaP)3 SSPS was
formed in the low-temperature growth under atomic H irradiation.
Title: Reduction of Point Defects and Formation of Abrupt Hetero-Interfaces in Low-Temperature Molecular Beam Epitaxy of GaAs and GaP under Atomic Hydrogen Irradiation
Description:
The removal effect of excess As and P atoms adsorbed on GaAs (100) and GaP
(100) surfaces by atomic hydrogen (H) irradiation was investigated by
reflection high-energy electron diffraction and X-ray photoelectron
spectroscopy.
It was found that the excess As and P atoms were effectively removed
by atomic H irradiation at a low temperature of 350°C.
Then, we attempted to obtain a high-quality GaAs epitaxial layer
and an ordered (GaAs)1(GaP)3 strained short-period superlattice (SSPS)
with abrupt GaAs/GaP hetero-interfaces in the low-temperature growth
under atomic H irradiation.
The quality of the GaAs epitaxial layer
and the abruptness of the GaAs/GaP hetero-interfaces in the (GaAs)1(GaP)3
SSPS were evaluated by photoluminescence, deep-level transient spectroscopy
and transmission electron microscopy.
As a result, it was clarified
that the density of point defects in the GaAs epitaxial layer was reduced
and an abrupt GaAs/GaP hetero-interface of the (GaAs)1(GaP)3 SSPS was
formed in the low-temperature growth under atomic H irradiation.
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