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Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
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Si- and Ge-doped GaN films were grown with GaN buffer layers. Si-doped GaN films, of which the carrier concentration was as high as 2×1019/cm3, were obtained. Every Si-doped GaN film showed a surface morphology that was smooth and mirrorlike. Ge-doped GaN films, of which the carrier concentration was as high as 1×1019/cm3, were obtained. Surface morphology of Ge-doped GaN films became poor around this carrier concentration. Both dopings showed good linearity of the carrier concentration as a function of the flow rate of GeH4 and SiH4. Therefore, Ge and Si are suitable n-type dopants for GaN.
Title: Si- and Ge-Doped GaN Films Grown with GaN Buffer Layers
Description:
Si- and Ge-doped GaN films were grown with GaN buffer layers.
Si-doped GaN films, of which the carrier concentration was as high as 2×1019/cm3, were obtained.
Every Si-doped GaN film showed a surface morphology that was smooth and mirrorlike.
Ge-doped GaN films, of which the carrier concentration was as high as 1×1019/cm3, were obtained.
Surface morphology of Ge-doped GaN films became poor around this carrier concentration.
Both dopings showed good linearity of the carrier concentration as a function of the flow rate of GeH4 and SiH4.
Therefore, Ge and Si are suitable n-type dopants for GaN.
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