Circuit modeling of memristors

Problem setting. Over the past few decades, the growth of electronic and computing power has fundamentally changed our work and life, and it is expected that significant new changes will occur in the future. A new generation of electronic computing machines will be built on the principle of building a human brain. It will be based on a fundamentally new element base with the use of fundamentally new technologies. Their main quality should be a high intellectual level, in particular, speech recognition, images. This requires a transition from the traditional von Neumann computer architecture to architectures that take into account the requirements of the tasks of creating artificial intelligence. The problems that the classical system of computing structure faces today are due to the bottlenecks of the von Neumann architecture. The memristor offers a solution that can be directly integrated into the processor crystal with a high density of the memory layer, which significantly reduces the memory load. And this solution increases the energy efficiency and speed of the system. The modeling of memristors has become a top priority, which will provide a research direction for the selection and production of memristors in the future. Target. The purpose of this work is to study the structure and characteristics of the HP memristor, develop a memristor model and analyze the influence of various parameters on the resistance of the memristor. Results. Some problems related to modeling the operation of memristors are considered. It is noted that the memristor has the following three features: 1. The value of the resistance of the memristor varies depending on the input voltage according to a characteristic similar to the Lissajous figure (inclined figure eight) – a compressed hysteresis loop passing through the origin; 2. This nonlinearity decreases with increasing frequency of the input signal: when the frequency reaches a certain higher value, the memristor becomes a linear resistor; 3. This nonlinearity is also related to the amplitude of the input signal: the greater the amplitude of the input signal, the greater the nonlinearity, and vice versa. The results of modeling a memristor controlled by a charge passing through it and a memristor controlled by a magnetic flux are presented. The analysis of the current-voltage characteristics of the memristor under various conditions is carried out. It is concluded that the factors affecting the resistance of the memristor are the voltage and frequency of the input signal, the cross-sectional area and the thickness of the functional layer of the memristor. Practical significance. Memristor modeling provides researchers with a direction and a method for further studying the characteristics of a memristor. At the same time, it provides assistance in optimizing the parameters and improving the performance of the memristor.