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Metalorganic Vapor Phase Epitaxy Growth of Be-Doped InP Using Bismethylcyclopentadienyl-Berylium
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We have applied Be as a p-type dopant for the InP layer grown by metalorganic vapor phase epitaxy. Very good control of Be doping has been obtained with bismethylcyclopentadienyl-beryllium. Carrier concentration as high as 2×1018 cm-3 has been achieved with excellent surface morphology. The photoluminescence peak intensity of the samples was comparable to that of Zn-doped InP.
It has been found that Be concentration drops abruptly at the InGaAsP/InP interface in an undoped InGaAsP/Be-doped InP structure, and there is no significant Be diffusion into undoped InGaAsP.
This indicates that Be is the most promising p-type dopant alternative to Zn, which has a large diffusion coefficient in the InP layer, for InGaAsP/InP laser diodes.
Title: Metalorganic Vapor Phase Epitaxy Growth of Be-Doped InP Using Bismethylcyclopentadienyl-Berylium
Description:
We have applied Be as a p-type dopant for the InP layer grown by metalorganic vapor phase epitaxy.
Very good control of Be doping has been obtained with bismethylcyclopentadienyl-beryllium.
Carrier concentration as high as 2×1018 cm-3 has been achieved with excellent surface morphology.
The photoluminescence peak intensity of the samples was comparable to that of Zn-doped InP.
It has been found that Be concentration drops abruptly at the InGaAsP/InP interface in an undoped InGaAsP/Be-doped InP structure, and there is no significant Be diffusion into undoped InGaAsP.
This indicates that Be is the most promising p-type dopant alternative to Zn, which has a large diffusion coefficient in the InP layer, for InGaAsP/InP laser diodes.
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