Silicon surface modification with low-energy broad ion beam

Broad ion beam etching by Ar⁺ with low energy up to 1000 eV has been utilized to modify physicochemical properties of the monocrystalline Silicon (100) surface. The silicon surface modification results in etching delay time during its vacuum-plasma etching in a SF₆/O₂/Ar mixture. The etching delay time of the modified Silicon has been found to be significantly affected by conditions of preliminary silicon treatment with the ion beam such as the ion energy and the ion incidence angle. The enhancement in the etching delay time has been detected while lower ion energy and higher ion incidence angle are applied. The combination of the ion beam etching and the vacuum plasma etching could be concerned as the suitable way to form silicon structures.